The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Feb. 23, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Yasuyuki Kawada, Tsukuba, JP;
Shiyang Ji, Tsukuba, JP;
Ryoji Kosugi, Tsukuba, JP;
Hidenori Koketsu, Tokyo, JP;
Kazuhiro Mochizuki, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
In a silicon carbide semiconductor device, an n-type drift layer is formed on a front surface of an n-type semiconductor substrate. Next, a trench is formed in the n-type drift layer, from a surface of the n-type drift layer. Next, a p-type pillar region is formed in the trench. A depth of the trench is at least three times a width of the trench. The p-type pillar region is formed by concurrently introducing a p-type first dopant and a gas containing an n-type second dopant incorporated at an atom position different from that of the first dopant.