Ota Tokyo, Japan

Hidekazu Inoto


Average Co-Inventor Count = 4.4

ph-index = 1


Location History:

  • Tokyo, JP (2020)
  • Ota Tokyo, JP (2020 - 2022)

Company Filing History:


Years Active: 2020-2022

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4 patents (USPTO):Explore Patents

Title: The Innovations of Hidekazu Inoto

Introduction

Hidekazu Inoto is a notable inventor based in Ota, Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work has been influential in advancing the capabilities of semiconductor devices.

Latest Patents

Inoto's latest patents include a semiconductor device that features a combination of enhancement-type transistors. This device consists of first to sixth transistors, where the first and fourth are p-channel types, while the second, third, fifth, and sixth are n-channel types. Notably, the breakdown voltages of the transistors are strategically designed to optimize performance. Another significant patent is for a junction field effect transistor, which includes a first semiconductor layer and an element isolation insulator that partitions an active area. This design enhances the functionality and efficiency of the transistor.

Career Highlights

Throughout his career, Hidekazu Inoto has worked with prominent companies such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Inoto has collaborated with esteemed colleagues, including Osamu Takata and Naozumi Terada. Their joint efforts have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Hidekazu Inoto's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence the industry and pave the way for future innovations.

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