The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Mar. 12, 2019
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Hidekazu Inoto, Ota Tokyo, JP;
Osamu Takata, Kanagawa, JP;
Itaru Tamura, Kanagawa, JP;
Naozumi Terada, Kanagawa, JP;
Hiroyoshi Kitahara, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a first semiconductor region of a first conductivity type, second, third and fourth semiconductor regions of a second conductivity type, a first insulating film, a second insulating film, a first electrode contacting the first insulating film, and a second electrode contacting the second insulating film. The second and third semiconductor regions contact the first semiconductor region. The fourth semiconductor region contacts the first semiconductor region, is disposed between the second semiconductor region and the third semiconductor region. The first insulating film contacts a first portion of the first semiconductor region between the second semiconductor region and the fourth semiconductor region. The second insulating film contacts a second portion of the first semiconductor region between the third semiconductor region and the fourth semiconductor region. The second insulating film is thicker than the first insulating film.