The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Jan. 21, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Koshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Hidekazu Inoto, Ota Tokyo, JP;
Osamu Takata, Yokohama Kanagawa, JP;
Naozumi Terada, Kawasaki Kanagawa, JP;
Hiroyoshi Kitahara, Yokohama Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes first to sixth transistors of enhancement type. The first and fourth transistors are of p-channel type. The second, third, fifth and sixth transistors are of n-channel type. A breakdown voltage of the third transistor is lower than a breakdown voltage of the second transistor. A breakdown voltage of the sixth transistor is lower than a breakdown voltage of the fifth transistor. The first to third transistors are connected in series between a first power supply potential and a second power supply potential lower than the first power supply potential. The fourth to sixth transistors are connected in series between the first power supply potential and the second power supply potential.