Company Filing History:
Years Active: 2012-2023
Title: **Innovator Spotlight: Hidehiko Mishima**
Introduction
Hidehiko Mishima is a distinguished inventor based in Osaka, Japan, known for his significant contributions to the field of materials science. With a total of four patents to his name, Mishima's work primarily focuses on enhancing the properties and applications of silicon carbide single crystal substrates.
Latest Patents
Mishima's latest patents revolve around silicon carbide single crystal substrates. One of his notable inventions involves a sophisticated measurement technique utilizing X-rays. In his innovation, when a detector is positioned in the [11-20] direction, the first measurement region, which includes the center of the main surface, is exposed to X-ray irradiation within a ±15° variation relative to the [-1-120] direction. This method achieves a maximum intensity ratio of more than or equal to 1500. Additionally, when the detector aligns with a direction parallel to the [-1100] direction and the measurement region is irradiated within a ±6° variation relative to the [1-100] direction, the maximum intensity ratio of a second intensity profile similarly reaches or exceeds 1500. This advancement significantly improves the precision of energy difference measurements, stating that an absolute value of the difference between the maximum and minimum energy that yields the maximum value in the first intensity profile remains less than or equal to 0.06 keV.
Career Highlights
Mishima is currently associated with Sumitomo Electric Industries, Limited, where he applies his expertise in materials science and engineering to propel innovations within the company. His work contributes to the development of advanced electronic components and devices that leverage the unique properties of silicon carbide.
Collaborations
During his career, Hidehiko Mishima has collaborated with esteemed colleagues like Kyoko Okita and Takashi Sakurada. Together, they have synergized their knowledge and skills to push the boundaries of silicon carbide technology, fostering an environment of creativity and innovation.
Conclusion
With a firm foothold in the field of materials science, Hidehiko Mishima continues to be a pivotal figure driving forward advancements in silicon carbide substrates. His dedication to innovation not only enhances technological capabilities but also marks significant strides in research and application, solidifying his reputation as a leading inventor in his domain.
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