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For the Inventor, By the Inventor

Higashikurume, Japan

Hideaki Isogai

This inventor holds 13 USPTO granted patents. Top assignee: Fujitsu Corporation. Active years: 1982-1986.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideaki Isogai. Retrieved from https://idiyas.com/inventor/hideaki-isogai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 6

Forward Citations = 84(Granted Patents)


Location History:

  • Inagi, JP (1982)
  • Higashikurume, JP (1983 - 1986)

Company Filing History:

goldMedal13 out of 39,371 
 
Fujitsu Corporation
 patents

Years Active: 1982-1986

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13 patents (USPTO):Explore Patents
1. 4625299 - Bipolar random access memory (1986-11-25),
2. 4601014 - Semiconductor memory with word line charge absorbing circuit (1986-07-15),
3. 4493059 - Circuit and method for writing in a semiconductor memory device (1985-01-08),
4. 4456979 - Static semiconductor memory device (1984-06-26),
5. 4432076 - Bipolar static semiconductor memory device with a high cell holding (1984-02-14),
6. 4394657 - Decoder circuit (1983-07-19),
7. 4385370 - Decoder circuit (1983-05-24),
8. 4376985 - Semiconductor memory device (1983-03-15),
9. 4373196 - Decoder circuit (1983-02-08),
10. 4369503 - Decoder circuit (1983-01-18),
11. 4369502 - Semiconductor memory circuit (1983-01-18),
12. 4355245 - Electronic circuit (1982-10-19),
13. 4349895 - Decoder circuit of a semiconductor memory device (1982-09-14),

Title: The Innovations of Hideaki Isogai

Introduction

Hideaki Isogai is a prominent inventor based in Higashikurume, Japan. He has made significant contributions to the field of semiconductor memory technology. With a total of 13 patents to his name, Isogai's work has had a substantial impact on the industry.

Latest Patents

One of Isogai's latest patents is for a bipolar random access memory. This semiconductor memory device includes a plurality of pairs of word lines, bit lines, and static memory cells located at their intersections. The design features constant current sources that are selectively connected to the bit lines. A reading-writing voltage control circuit manages the potential of each bit line during data operations, while a writing current control circuit regulates the current during data writing. This innovation allows the bipolar random access memory to operate at high speeds with reduced power consumption.

Another notable patent is for a semiconductor memory circuit that includes a charge absorbing circuit. This circuit absorbs current induced by voltage increases in the word line when it switches from a selection state to a nonselection state. These advancements demonstrate Isogai's commitment to enhancing memory technology.

Career Highlights

Hideaki Isogai is currently employed at Fujitsu Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in developing efficient memory solutions that meet the demands of modern computing.

Collaborations

Isogai has collaborated with notable colleagues, including Yukio Takahashi and Isao Fukushi. Their combined expertise has contributed to the success of various projects within the semiconductor industry.

Conclusion

Hideaki Isogai's contributions to semiconductor memory technology are noteworthy and impactful. His innovative patents reflect his dedication to advancing the field and improving memory efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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