The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 1986
Filed:
Jan. 25, 1984
Hideaki Isogai, Higashikurume, JP;
Isao Fukushi, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor memory device used as a bipolar random access memory including a plurality of pairs of word lines, a plurality of pairs of bit lines, and a plurality of static memory cells located at the intersections of and connected between the pairs of word and bit lines. A plurality of constant current sources are selectively connected to the bit lines. A reading-writing voltage control circuit controls the potential of each bit line during the reading and writing of data and a writing current control circuit controls the current flowing to each bit line during the writing of data into the memory cell. Further, the writing current control circuit connects the constant current source to the reading-writing voltage control circuit in the writing of data to the memory cell. Accordingly, the bipolar random access memory can operate at a high speed with reduced power consumption and without unnecessary current flowing in the peripheral circuits.