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For the Inventor, By the Inventor

Kyungkido, South Korea

Heung-Soo Im

USPTO Granted Patents = 19

Average Co-Inventor Count = 2.0

ph-index = 9

Forward Citations = 314(Granted Patents)


Location History:

  • Seoul, KR (1998 - 1999)
  • Suwon, KR (1999 - 2003)
  • Kyunggi-do, KR (2000 - 2003)
  • Kyonggi-do, KR (2004)
  • Yongin-shi, KR (2005)
  • Kyung ki Do, KR (2006 - 2010)

Company Filing History:

goldMedal19 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1998-2010

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19 patents (USPTO):Explore Patents
1. 7787300 - Memory devices with page buffer having dual registers and method of using the same (2010-08-31),
2. 7602644 - Memory devices with page buffer having dual registers and method of using the same (2009-10-13),
3. 7227785 - Memory devices with page buffer having dual registers and method of using the same (2007-06-05),
4. 7042770 - Memory devices with page buffer having dual registers and method of using the same (2006-05-09),
5. 6996014 - Memory devices with page buffer having dual registers and method of using the same (2006-02-07),
6. 6889268 - Multi-chip system having a continuous burst read mode of operation (2005-05-03),
7. 6724682 - Nonvolatile semiconductor memory device having selective multiple-speed operation mode (2004-04-20),
8. 6671204 - Nonvolatile memory device with page buffer having dual registers and methods of using the same (2003-12-30),
9. 6603684 - Semiconductor memory device having noise tolerant input buffer (2003-08-05),
10. 6545910 - Non-volatile semiconductor memory device having word line defect check circuit (2003-04-08),
11. 6433590 - Current mirror type sense amplifier circuits for semiconductor memory devices and methods of operating same (2002-08-13),
12. 6381187 - Sense amplifier circuit for use in a semiconductor memory device (2002-04-30),
13. 6104668 - Programmable mode register for use in synchronized memory device (2000-08-15),
14. 6087859 - Current mirror type sense amplifier circuit for semiconductor memory (2000-07-11),
15. 6018487 - Read-only memory device having bit line discharge circuitry and method (2000-01-25),

Title: Inventor Heung-Soo Im: Pioneering Innovations in Kyungkido, KR

Introduction: Heung-Soo Im is a visionary inventor hailing from Kyungkido, South Korea, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Heung-Soo Im holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing her commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a career spanning over two decades, Heung-Soo Im has worked with leading research institutions and tech companies to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout her career, Heung-Soo Im has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge-sharing to drive progress in the tech sector.

Conclusion: Heung-Soo Im's passion for innovation and her relentless pursuit of excellence continue to inspire the next generation of inventors and pave the way for a brighter, more sustainable future.

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