The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Sep. 27, 2000
Dong-Woo Lee, Seoul, KR;
Heung-Soo Im, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Disclosed herein is a sense amplifier circuit which includes a first, a second and a third similar load transistors. The first and second load transistors supply a dummy data line with a current of the same amount to one another. Acting in a current mirror configuration, the third load transistor supplies a data line with a current equaling the total current supplied by the first and second load transistors. A dummy memory cell is composed of the same transistor as an on-state memory cell. According to this sense amplifier structure, it is very easy to obtain a dummy cell current which has an intermediate value consistently between an on cell current and an off cell current of the memory cell, which are supplied from the third load transistor to the data line. The improved intermediate value yields a reliable readout of the memory cell.