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For the Inventor, By the Inventor

San Ramon, CA, United States of America

Hengyang James Lin

USPTO Granted Patents = 13

Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 108(Granted Patents)


Location History:

  • San Jose, CA (US) (2000 - 2007)
  • San Ramon, CA (US) (2011 - 2012)

Company Filing History:

goldMedal13 out of 4,791 
 
National Semiconductor Corporation
 patents

Years Active: 2000-2012

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13 patents (USPTO):Explore Patents
1. 8284600 - 5-transistor non-volatile memory cell (2012-10-09),
2. 7863644 - Bipolar transistor and method of forming the bipolar transistor with a backside contact (2011-01-04),
3. 7286383 - Bit line sharing and word line load reduction for low AC power SRAM architecture (2007-10-23),
4. 7239558 - Method of hot electron injection programming of a non-volatile memory (NVM) cell array in a single cycle (2007-07-03),
5. 7188044 - World-wide distributed testing for integrated circuits (2007-03-06),
6. 7167392 - Non-volatile memory cell with improved programming technique (2007-01-23),
7. 7164606 - Reverse fowler-nordheim tunneling programming for non-volatile memory cell (2007-01-16),
8. 7126866 - Low power ROM architecture (2006-10-24),
9. 7061792 - Low AC power SRAM architecture (2006-06-13),
10. 6642587 - High density ROM architecture (2003-11-04),
11. 6618282 - High density ROM architecture with inversion of programming (2003-09-09),
12. 6563730 - Low power static RAM architecture (2003-05-13),
13. 6100590 - Low capacitance multilevel metal interconnect structure and method of (2000-08-08),

Title: Innovations and Contributions of Hengyang James Lin

Introduction: Hengyang James Lin, an accomplished inventor based in San Ramon, California, has made significant contributions to the field of technology with a total of 13 patents to his name. His work primarily focuses on advancements in non-volatile memory cells and bipolar transistors, showcasing his innovative spirit and expertise in semiconductor design.

Latest Patents: Among his latest patents, one stands out: the 5-transistor non-volatile memory cell. This innovative design includes an NMOS control transistor, a PMOS erase transistor, and an NMOS data transistor, each meticulously structured to enhance the efficiency of non-volatile memory technology. Additionally, he has developed a bipolar transistor and a method for forming bipolar transistors with a backside contact. This method innovates the traditional fabrication process by eliminating the need for heavily-doped buried layers, utilizing through-the-wafer contacts instead.

Career Highlights: Hengyang James Lin's professional journey has been closely associated with National Semiconductor Corporation, where he has effectively applied his talents in semiconductor technology. His contributions have not only advanced the company's offerings but have also propelled broader industry innovations in memory and transistor technology.

Collaborations: Throughout his career, Hengyang has collaborated with esteemed colleagues such as Pavel Poplevine and Andrew J. Franklin. These collaborations have enriched his work and facilitated the exchange of cutting-edge ideas, further enhancing the field of semiconductor research and development.

Conclusion: Hengyang James Lin remains a pivotal figure in the world of technology through his commitment to innovation and collaboration. His patents and contributions continue to influence the ever-evolving landscape of semiconductors, marking him as a notable inventor in his domain.

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