The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Sep. 26, 2005
Pavel Poplevine, Foster City, CA (US);
Annie-li-keow Lum, Milpitas, CA (US);
Hengyang Lin, San Jose, CA (US);
Andrew J. Franklin, Santa Clara, CA (US);
Pavel Poplevine, Foster City, CA (US);
Annie-Li-Keow Lum, Milpitas, CA (US);
Hengyang Lin, San Jose, CA (US);
Andrew J. Franklin, Santa Clara, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A non-volatile memory (NVM) cell splits its basic functions, i.e. program, erase, read and control, among a four PMOS transistor structure, allowing independent optimization of each cell function. The cell structure also includes an embedded static random access memory (SRAM) cell that utilizes a latch structure to preprogram data to be written to the cell and a plurality of cascoded NMOS pass gates. The cell structure reduces total programming time and provides the flexibility of programming the entire cell array simultaneously or one row or sector of the array at a time.