East Fishkill, NY, United States of America

Heinz Hönigschmid

This inventor holds 37 USPTO granted patents, primarily in Integrated Memory Technology. Top assignees: Infineon Technologies Ag, Siemens Aktiengesellschaft. Active years: 2001-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heinz Hönigschmid. Retrieved from https://idiyas.com/inventor/heinz-handoumlnigschmid

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 37

% Patents Active = 67.6

Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 164(Granted Patents)

Location History:

Starnberg, DE (2001 - 2002)
East Fishkell, NY (US) (2002)
Pöcking, DE (2001 - 2003)
Essex Jct, VT (US) (2003)
East Fishkill, NY (US) (2002 - 2004)
Essex Junction, VT (US) (2002 - 2004)
Essex Jct., VT (US) (2003 - 2004)
Essex Junction, CT (US) (2004)

Company Filing History:

35 out of 15,023

Infineon Technologies Ag

patents

2 out of 30,867

Siemens Aktiengesellschaft

patents

Years Active: 2001-2004

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Areas of Expertise:

MRAM

Ferroelectric Memory

Memory Cell Array

Integrated Circuit

Signal Overcoupling

Redundancy

Capacitor Configuration

Memory Banks

Decoder Element

Refresh Logic Circuit

Aging Acceleration

Transistor Configuration

37 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6826075 - Random access semiconductor memory with reduced signal overcoupling (2004-11-30),

2. 6816406 - Magnetic memory configuration (2004-11-09),

3. 6803618 - MRAM configuration having selection transistors with a large channel width (2004-10-12),

4. 6741513 - Data memory with a plurality of memory banks (2004-05-25),

5. 6664158 - Ferroelectric memory configuration and a method for producing the configuration (2003-12-16),

6. 6657916 - Integrated memory with memory cell array (2003-12-02),

7. 6645809 - Process for producing a capacitor configuration (2003-11-11),

8. 6577528 - Circuit configuration for controlling write and read operations in a magnetoresistive memory configuration (2003-06-10),

9. 6545526 - Fuse circuit configuration (2003-04-08),

10. 6538950 - Integrated memory and corresponding operating method (2003-03-25),

11. 6538913 - Method for operating a ferroelectric memory configuration and a ferroelectric memory configuration (2003-03-25),

12. 6525974 - Integrated memory with redundancy (2003-02-25),

13. 6515890 - Integrated semiconductor memory having memory cells with a ferroelectric memory property (2003-02-04),

14. 6507512 - Circuit configuration and method for accelerating aging in an MRAM (2003-01-14),

15. 6504747 - Integrated memory with plate line segments (2003-01-07),

Title: The Innovative Journey of Heinz Hönigschmid

Introduction: Heinz Hönigschmid, a distinguished inventor based in East Fishkill, NY, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Heinz Hönigschmid holds several patents in the areas of renewable energy technologies, advanced materials, and artificial intelligence, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Heinz Hönigschmid has worked for leading tech companies, where he spearheaded research and development projects that have led to cutting-edge inventions.

Collaborations: Throughout his career, Heinz Hönigschmid has collaborated with top researchers, engineers, and scientists from renowned universities and research institutions, fostering a culture of innovation and excellence.

Conclusion: Heinz Hönigschmid's passion for innovation, coupled with his dedication to pushing the boundaries of technology, has solidified his reputation as a visionary inventor in the tech industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]