The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2003

Filed:

Dec. 17, 2001
Applicant:
Inventors:

Dietmar Gogl, Essex Junction, VT (US);

Helmut Kandolf, München, DE;

Heinz Hönigschmid, Essex Junction, VT (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/100 ; G11C 1/114 ;
U.S. Cl.
CPC ...
G11C 1/100 ; G11C 1/114 ;
Abstract

A circuit configuration for controlling write operations and read operations in an MRAM memory configuration includes selection transistors grouped in sections of equal numbers of the selection transistors. The selection transistors of each of the sections are jointly connected, at the ends of the bit lines, to a respective interacting pair of read/write amplifiers via those electrode terminals of the selection transistors that are not connected to the bit lines. The read/write amplifiers are controlled such that if a write signal is fed thereto, write currents for writing a logic “1” or “0” flow in a first direction or a second direction in all of the bit lines selected by a corresponding column select signal and, if a read signal is fed in, a logic state stored in one of the magnetoresistive memory cells can be read out.


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