The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Sep. 04, 2001
Applicant:
Inventor:
Heinz Hönigschmid, East Fishkill, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/100 ;
U.S. Cl.
CPC ...
G11C 1/100 ;
Abstract
A circuit configuration and a method for accelerating aging in an MRAM, in which additional circuit are provided in order to feed a higher current into a control line of a memory cell which is located nearer the soft-magnetic layer. A second transistor is inserted in parallel with the driver transistors, which form a first control unit. The second transistor supplies a current through the control line located nearer the soft-magnetic layer. The second transistor can drive a higher current through the control line and can be activated in a test mode.