Suwon, South Korea

Heesuk Kim

This inventor holds 4 USPTO granted patents and 6 published patent applications. Top assignees: Samsung Electronics Ltd., Samsung Electronics Co., Ltd.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heesuk Kim. Retrieved from https://idiyas.com/inventor/heesuk-kim-k3nqpyvr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 25.0

Average Co-Inventor Count = 6.6

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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4 patents (USPTO):Explore Patents

Title: Heesuk Kim: Innovator in Semiconductor Technology

Introduction

Heesuk Kim is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced storage devices.

Latest Patents

Heesuk Kim holds 1 patent for his innovative work on semiconductor storage devices and data storage systems. His patent describes a semiconductor device that includes a first structure and a second structure. The first structure consists of a substrate, circuit elements, a lower interconnection structure, and lower bonding pads. The second structure features a stack structure with gate electrodes and interlayer insulating layers, along with channel structures and upper bonding pads that connect to the lower bonding pads.

Career Highlights

Heesuk Kim is associated with Samsung Electronics Co., Ltd., a leading company in the technology sector. His work has been instrumental in advancing semiconductor technology, which is crucial for modern electronic devices.

Collaborations

Heesuk Kim has collaborated with notable colleagues, including Hyojoon Ryu and Bongyong Lee, to further enhance the development of semiconductor technologies.

Conclusion

Heesuk Kim's contributions to semiconductor storage devices exemplify the innovative spirit of modern technology. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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