The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 80/00 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01); H10W 90/00 (2026.01); H10W 90/20 (2026.01);

U.S. Cl.

CPC ...

H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 80/00 (2023.02); H10W 20/42 (2026.01); H10W 20/435 (2026.01); H10W 90/00 (2026.01); H10W 90/297 (2026.01);

Abstract

Disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. The semiconductor device comprises a first gate stack structure including a first dielectric pattern and a first conductive pattern that are alternately stacked with each other, a memory channel structure including a first memory portion that penetrates the first gate stack structure, a through contact including a first through portion at a level the same as a level of the first memory portion, and a connection contact including a first connection portion at a level the same as the level of the first memory portion and the level of the first through portion. A minimum width of the first memory portion is less than a minimum width of the first through portion and a minimum width of the first connection portion.

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