The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01); H10B 80/00 (2023.01);

U.S. Cl.

CPC ...

H01L 23/5283 (2013.01); H01L 23/5226 (2013.01); H01L 25/0652 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 80/00 (2023.02); H01L 2225/06541 (2013.01);

Abstract

A semiconductor device includes a substrate; a conductive layer; and a contact plug connected to the conductive layer. The contact plug includes a first portion; and a second portion, sequentially stacked, wherein a width of an upper surface of the first portion is wider than a width of a lower surface of the second portion. The contact plug includes a barrier layer; a first conductive layer on the barrier layer; and a second conductive layer on the first conductive layer. The second conductive layer comprises voids. The barrier layer, the first conductive layer, and the second conductive layer extend continuously in the first and second portions. The barrier layer has a first thickness, the second conductive layer has a second thickness, equal to or greater than the first thickness, and the first conductive layer has a third thickness, equal to or greater than the second thickness.

Find Patent Forward Citations

Park, Yejin. (2026). Semiconductor device and data storage system including the same (U.S. Patent No. 12588496). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588496

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