Heesoo Lee

Title: Heesoo Lee: Innovator in Oxide Thin Film Transistors

Introduction

Heesoo Lee is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of oxide thin film transistors. With a total of three patents to his name, Lee's work is at the forefront of innovation in this area.

Latest Patents

Heesoo Lee's latest patents include an oxide thin film transistor and a method of fabricating the same. This invention discloses an oxide thin film transistor that features a gate electrode formed on a substrate, a gate insulating layer, an oxide semiconductor layer, and source and drain electrodes. The activation of the oxide semiconductor layer occurs through heat of less than 300°C and a change in the magnetic flux of an applied magnetic field. The activation process utilizes Joule heat generated from eddy currents in the oxide semiconductor layer, providing a novel approach to thin film activation. Another patent focuses on a thin film activation method and a thin film transistor fabrication method, emphasizing the use of electrical energy for activating thin films and processing substrates.

Career Highlights

Heesoo Lee is affiliated with Yonsei University, where he continues to advance research in semiconductor technologies. His academic background and innovative spirit have positioned him as a key figure in the field.

Collaborations

Heesoo Lee has collaborated with notable colleagues, including Hyun Jae Kim and Young Jun Tak. Their joint efforts contribute to the ongoing advancements in semiconductor research and development.

Conclusion

Heesoo Lee's work in oxide thin film transistors exemplifies the innovative spirit of modern inventors. His contributions are paving the way for future advancements in semiconductor technology.