The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Jan. 25, 2017
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Hyun Jae Kim, Seoul, KR;
Jeong Woo Park, Seoul, KR;
Young Jun Tak, Seoul, KR;
Tae Soo Jung, Seoul, KR;
Heesoo Lee, Seoul, KR;
Won-Gi Kim, Goyang-si, KR;
Jusung Chung, Seoul, KR;
Abstract
Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.