The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Feb. 26, 2016
Applicant:
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
Hyun Jae Kim, Seoul, KR;
Doo Hyun Yoon, Seoul, KR;
Tae Soo Jung, Seoul, KR;
Young Jun Tak, Seoul, KR;
Heesoo Lee, Seoul, KR;
Wongi Kim, Goyang-si, KR;
Jeong Woo Park, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/479 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/477 (2013.01); H01L 21/479 (2013.01); H01L 29/42356 (2013.01); H01L 29/7869 (2013.01);
Abstract
The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.