Yonsei University

Heesoo Lee

Hyun Jae Kim

Young Jun Tak

Jeong Woo Park

Tae Soo Jung

Doo Hyun Yoon

Jusung Chung

Wongi Kim

Won-Gi Kim

Sung Pyo Park

Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300&#xb0; C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300&#xb0; C.

Oxide thin film transistor and method of fabricating the same

The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Thin film activation method using electrical energy and thin film transistor fabrication method

Provided are an oxide thin film, a method for post-treating an oxide thin film and an electronic apparatus. An oxide thin film is an oxide thin film with a single layer including a metal oxide, and the physical properties of the oxide thin film may change in the thickness direction thereof.

Oxide thin film, method for post-treating oxide thin film and electronic apparatus

Growing community of inventors

Seoul, South Korea

Heesoo Lee