IDiyas

For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Harry H Fujimoto

USPTO Granted Patents = 17

Average Co-Inventor Count = 3.3

ph-index = 12

Forward Citations = 1,669(Granted Patents)


Company Filing History:

goldMedal17 out of 54,664 
 
Intel Corporation
 patents

Years Active: 1994-2008

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17 patents (USPTO):
1. 7411269 - Isolation structure configurations for modifying stresses in semiconductor devices (2008-08-12),
2. 7410858 - Isolation structure configurations for modifying stresses in semiconductor devices (2008-08-12),
3. 6876053 - Isolation structure configurations for modifying stresses in semiconductor devices (2005-04-05),
4. 6709898 - Die-in-heat spreader microelectronic package (2004-03-23),
5. 6562653 - Silicon interposer and multi-chip-module (MCM) with through substrate vias (2003-05-13),
6. 6509622 - Integrated circuit guard ring structures (2003-01-21),
7. 6271469 - Direct build-up layer on an encapsulated die package (2001-08-07),
8. 6229216 - Silicon interposer and multi-chip-module (MCM) with through substrate vias (2001-05-08),
9. 6219243 - Heat spreader structures for enhanced heat removal from both sides of chip-on-flex packaged units (2001-04-17),
10. 6154366 - Structures and processes for fabricating moisture resistant chip-on-flex (2000-11-28),
11. 5962196 - Deep ultraviolet light photoresist processing (1999-10-05),
12. 5747879 - Interface between titanium and aluminum-alloy in metal stack for (1998-05-05),
13. 5540346 - Method of making integrated circuit waveguide (1996-07-30),
14. 5465860 - Method of forming an integrated circuit waveguide (1995-11-14),
15. 5384219 - Reticle with structurally identical inverted phase-shifted features (1995-01-24),

Title: Innovations of Harry H Fujimoto

Introduction

Harry H Fujimoto is a prominent inventor based in Sunnyvale, CA. He has made significant contributions to the field of semiconductor devices, holding a total of 17 patents. His work focuses on modifying isolation structures to enhance the performance of MOS devices.

Latest Patents

Fujimoto's latest patents include innovative apparatus and methods for modifying isolation structure configurations in MOS devices. These inventions aim to either induce or reduce tensile and compressive stresses on the active areas of these devices. The configurations utilize both low-modulus and high-modulus dielectric materials, as well as materials that induce tensile and compressive stresses. Additionally, his patents detail methods for altering the depth of isolation structures, including trench depth and the materials used, to effectively modify the stresses on semiconductor devices.

Career Highlights

Harry H Fujimoto is currently employed at Intel Corporation, where he continues to push the boundaries of semiconductor technology. His expertise in stress modification in semiconductor devices has positioned him as a key player in the industry.

Collaborations

Fujimoto has collaborated with notable colleagues such as Qing Ma and Jin Hyung Lee, contributing to advancements in semiconductor technology.

Conclusion

Harry H Fujimoto's innovative work in semiconductor device technology has led to numerous patents that enhance device performance. His contributions are vital to the ongoing evolution of the semiconductor industry.

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