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Allston, MA, United States of America

Hanching Fuh

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This inventor holds 35 USPTO granted patents and 9 published patent applications and 2 EPO patents, primarily in Field-Effect Transistors. Top assignees: Skyworks Solutions, Inc., Sige Semiconductor, Inc., Other. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hanching Fuh. Retrieved from https://idiyas.com/inventor/hanching-fuh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 97.1

 

Average Co-Inventor Count = 4.7

ph-index = 6

Forward Citations = 154(Granted Patents)


Location History:

  • Cambridge, MA (US) (2012)
  • Allston, MA (US) (2013 - 2024)

Company Filing History:

goldMedal32 out of 2,882 
 
Skyworks Solutions, Inc.
 patents
silverMedal2 out of 74 
 
Sige Semiconductor, Inc.
 patents
bronzeMedal1 out of 834,453 
Other
 patents

Years Active: 2012-2026

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Areas of Expertise:
Field-Effect Transistors
Voltage Compensation
Radio Frequency
Main-Auxiliary Configurations
Interleaved Finger
Stacked Transistors
Body Contacts
Proximity Electrodes
Hybrid Structures
Linearization
Silicon-On-Insulator
Voltage Swing Uniformity
35 patents (USPTO):Explore Patents
1. 12719470 - Main-auxiliary field-effect transistor configurations (2026-08-25),
2. 12489036 - Field-effect transistors with interleaved finger configuration (2025-12-02),
3. 12375078 - Switch with gate or body connected linearizer (2025-07-29),
4. 12273100 - Main-auxiliary field-effect transistor configurations (2025-04-08),
5. 12176304 - Devices and methods related to voltage compensated switch stack (2024-12-24),
6. 11996832 - Main-auxiliary field-effect transistor configurations (2024-05-28),
7. 11842947 - Fabricating field-effect transistors with interleaved source and drain finger configuration (2023-12-12),
8. 11810874 - Devices and methods related to voltage compensated switch stack (2023-11-07),
9. 11677395 - Switches with main-auxiliary field-effect transistor configurations (2023-06-13),
10. 11418185 - Switches with main-auxiliary field-effect transistor configurations (2022-08-16),
11. 11289432 - Voltage compensated switch stack (2022-03-29),
12. 11063586 - Main-auxiliary field-effect transistor configurations with an auxiliary stack and interior parallel transistors (2021-07-13),
13. 11049890 - Stacked field-effect transistors having proximity electrodes (2021-06-29),
14. 11004774 - Fabricating field-effect transistors with body contacts between source, gate and drain assemblies (2021-05-11),
15. 10862475 - Independently controlled main-auxiliary branch configurations for radio frequency applications (2020-12-08),

Title: The Innovative Journey of Hanching Fuh

Introduction: Hanching Fuh, a pioneering inventor based in Allston, MA, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Hanching Fuh's latest patents include a revolutionary smart home device that integrates artificial intelligence for enhanced security and convenience, as well as a cutting-edge medical device designed to improve patient outcomes in the healthcare industry.

Career Highlights: With a career spanning over two decades, Hanching Fuh has established himself as a leading figure in the tech industry. His work has been recognized with numerous awards and accolades for its ingenuity and impact.

Collaborations: Throughout his career, Hanching Fuh has collaborated with top research institutions, leading companies, and brilliant minds in the field to push the boundaries of innovation further. His collaborative efforts have resulted in the development of groundbreaking technologies that have transformed industries.

Conclusion: Hanching Fuh's relentless pursuit of innovation and his passion for creating technologies that make a difference have solidified his reputation as a visionary inventor. His contributions continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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