The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Oct. 01, 2019
Skyworks Solutions, Inc., Woburn, MA (US);
Hailing Wang, Acton, MA (US);
Hanching Fuh, Allston, MA (US);
Dylan Charles Bartle, Arlington, MA (US);
Jerod F. Mason, Bedford, MA (US);
SKYWORKS SOLUTIONS, INC., Irvine, CA (US);
Abstract
Field-effect transistor (FET) devices are described herein that include an insulator layer, a plurality of active field-effect transistors (FETs) formed from an active silicon layer implemented over the insulator layer, a substrate layer implemented under the insulator layer, and proximity electrodes for a plurality of the FETs that are each configured to receive a voltage and to generate an electric field between the proximity electrode and a region generally underneath a corresponding active FET. FET devices can be stacked wherein one or more of the FET devices in the stack includes a proximity electrode. The proximity electrodes can be biased together, biased in groups, and/or biased individually.