Han-Ming Wu

Title: Innovations by Han-Ming Wu in Semiconductor Technology

Introduction

Han-Ming Wu is a notable inventor based in Pingjhen, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gate insulators for group III-V nitride semiconductor devices. With a total of three patents to his name, Wu's work is recognized for its innovative approaches and practical applications.

Latest Patents

One of Han-Ming Wu's latest patents is a method of forming a gate insulator in group III-V nitride semiconductor devices. This method involves conducting a photo-assisted electrochemical process to create a gate-insulating layer on a gallium nitride layer of the semiconductor device. The gate-insulating layer consists of gallium oxynitride and gallium oxide. Additionally, a rapid thermal annealing process is performed. The photo-assisted electrochemical process utilizes an electrolyte bath containing buffered CH3COOH at a pH between approximately 5.5 and 7.5. The rapid thermal annealing process is conducted in an O2 environment at temperatures ranging from about 500°C to 800°C.

Career Highlights

Han-Ming Wu is currently employed at Tekcore Co., Ltd., where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of semiconductor devices.

Collaborations

Throughout his career, Wu has collaborated with several talented individuals, including Lung-Han Peng and Jing-Yi Lin. These collaborations have contributed to the successful development of innovative technologies in the semiconductor field.

Conclusion

Han-Ming Wu's contributions to semiconductor technology, particularly through his innovative patents, highlight his expertise and commitment to advancing the industry. His work continues to influence the development of more efficient semiconductor devices.