The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Jun. 27, 2007
Lung-han Peng, Taipei, TW;
Han-ming Wu, Pingjhen, TW;
Jing-yi Lin, Tuku Township, Yunlin County, TW;
Lung-Han Peng, Taipei, TW;
Han-Ming Wu, Pingjhen, TW;
Jing-Yi Lin, Tuku Township, Yunlin County, TW;
Tekcore Co., Ltd., Nantou, TW;
Abstract
A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile