Company Filing History:
Years Active: 2007-2011
Title: Innovations of Jing-Yi Lin in Semiconductor Technology
Introduction
Jing-Yi Lin is a notable inventor based in Tuku, Taiwan, recognized for his contributions to semiconductor technology. He holds two patents that showcase his expertise in the field, particularly in the development of gate insulators for group III-V nitride semiconductor devices. His innovative methods are paving the way for advancements in semiconductor manufacturing.
Latest Patents
Jing-Yi Lin's latest patents focus on a method of forming a gate insulator in group III-V nitride semiconductor devices. This method involves conducting a photo-assisted electrochemical process to create a gate-insulating layer on a gallium nitride layer of the semiconductor device. The gate-insulating layer comprises gallium oxynitride and gallium oxide. Additionally, a rapid thermal annealing process is performed, utilizing an O2 environment at temperatures ranging from about 500°C to 800°C. The photo-assisted electrochemical process employs an electrolyte bath containing buffered CH3COOH at a pH between approximately 5.5 and 7.5.
Career Highlights
Jing-Yi Lin is currently employed at Tekcore Co., Ltd., where he continues to innovate in the semiconductor industry. His work has significantly impacted the efficiency and effectiveness of semiconductor devices, making him a valuable asset to his company and the field at large.
Collaborations
Jing-Yi Lin collaborates with esteemed colleagues, including Lung-Han Peng and Han-Ming Wu. Their combined expertise fosters a productive environment for innovation and development in semiconductor technology.
Conclusion
Jing-Yi Lin's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative methods are essential for the advancement of semiconductor manufacturing processes.