The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jul. 16, 2004
Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes
Lung-han Peng, Taipei, TW;
Han-ming Wu, Taoyuan, TW;
Sung-li Wang, Taipei, TW;
Chia-wei Chang, Kaohsiung, TW;
Chin-yi Lin, Yunlin, TW;
Lung-Han Peng, Taipei, TW;
Han-Ming Wu, Taoyuan, TW;
Sung-Li Wang, Taipei, TW;
Chia-Wei Chang, Kaohsiung, TW;
Chin-Yi Lin, Yunlin, TW;
Tekcore Co., Ltd., Nantou, TW;
Abstract
A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.