Han-Min Huang

Title: Han-Min Huang: Innovator in Semiconductor Technology

Introduction: Han-Min Huang is a prominent inventor based in Taipei County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of metal-oxide-semiconductor transistors. With a total of 6 patents to his name, Huang's work has had a substantial impact on the industry.

Latest Patents: Among his latest innovations is a manufacturing method for an anti punch-through leakage current metal-oxide-semiconductor transistor. This method involves creating a high voltage deep first type well region and a first type light doping region within a second type substrate. A mask with a dopant implanting opening is utilized to form an anti punch-through leakage current structure by implanting the first type dopant. The doping concentration of the first type dopant in the high voltage deep first type well region is carefully controlled to optimize performance. Additionally, a second type body is formed by implanting a second type dopant, followed by the establishment of a gate structure on the substrate.

Career Highlights: Han-Min Huang is currently employed at United Microelectronics Corporation, where he continues to advance semiconductor technology. His expertise in manufacturing methods for transistors has positioned him as a key player in the field.

Collaborations: Huang has collaborated with notable colleagues, including Chin-Lung Chen and Chun-Yao Lee, contributing to various projects that enhance the capabilities of semiconductor devices.

Conclusion: Han-Min Huang's innovative work in semiconductor technology, particularly in the development of anti punch-through leakage current transistors, showcases his dedication to advancing the field. His contributions are vital to the ongoing evolution of electronic devices and systems.