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For the Inventor, By the Inventor

Taichung, Taiwan

Han-Chao Lai

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.1

ph-index = 5

Forward Citations = 97(Granted Patents)


Company Filing History:

goldMedal11 out of 3,595 
 
Macronix International Co., Ltd.
 patents

Years Active: 2002-2004

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11 patents (USPTO):Explore Patents
1. 6720614 - Operation method for programming and erasing a data in a P-channel sonos memory cell (2004-04-13),
2. 6671209 - Erasing method for p-channel NROM (2003-12-30),
3. 6635946 - Semiconductor device with trench isolation structure (2003-10-21),
4. 6620693 - Non-volatile memory and fabrication thereof (2003-09-16),
5. 6524919 - Method for manufacturing a metal oxide semiconductor with a sharp corner spacer (2003-02-25),
6. 6524913 - Method of fabricating a non-volatile memory with a spacer (2003-02-25),
7. 6492235 - Method for forming extension by using double etch spacer (2002-12-10),
8. 6482709 - Manufacturing process of a MOS transistor (2002-11-19),
9. 6458643 - Method of fabricating a MOS device with an ultra-shallow junction (2002-10-01),
10. 6455388 - Method of manufacturing metal-oxide semiconductor transistor (2002-09-24),
11. 6448142 - Method for fabricating a metal oxide semiconductor transistor (2002-09-10),

Title: The Innovations of Han-Chao Lai

Introduction

Han-Chao Lai is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 11 patents. His work focuses on innovative methods for programming and erasing data in memory devices, particularly in P-channel SONOS and NROM technologies.

Latest Patents

One of Han-Chao Lai's latest patents is an operation method for programming and erasing data in a P-channel SONOS memory cell. This method involves a charge trapping layer on a substrate, with a gate electrode positioned above it. The process includes applying specific voltages to the gate electrode and the drain region to facilitate programming and erasing actions. Another notable patent is an erasing method for a p-channel nitride read-only memory. This method utilizes a voltage difference between the control gate and the drain to trigger a band-to-band induced hot electron injection, effectively erasing the memory.

Career Highlights

Han-Chao Lai is currently employed at Macronix International Co., Ltd., where he continues to develop cutting-edge memory technologies. His expertise in the field has led to numerous advancements that enhance the performance and reliability of memory devices.

Collaborations

Throughout his career, Han-Chao Lai has collaborated with notable colleagues, including Hung-Sui Lin and Tao-Cheng Lu. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Han-Chao Lai's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative methods continue to shape the future of data storage solutions.

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