The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
Jul. 06, 2001
Applicant:
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18236 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18236 ;
Abstract
A manufacturing method of a MOS transistor. A gate oxide layer and a polysilicon layer are successively formed on a substrate. A nitrogen ion implantation is performed to implant nitrogen ions into the contact region of the polysilicon layer with the gate dielectric layer. An annealing is performed in order to enlarge the polysilicon grains within the polysilicon layer. The polysilicon layer is patterned to form a gate. A dopant is implanted into the substrate on the sides of the gate, thereby forming a source/drain region.