This inventor holds 4 USPTO granted patents. Top assignee: Stmicroelectronics Gmbh. Active years: 2005-2016.
Location History:
- Carrollton, TX (US) (2005 - 2008)
- Phoenix, AZ (US) (2015 - 2016)
Company Filing History:
Years Active: 2005-2016
Title: Innovations of Inventor Hai Ding
Introduction
Hai Ding is a notable inventor based in Phoenix, AZ, who has made significant contributions to the field of semiconductor technology. With a total of 4 patents to his name, he has demonstrated a commitment to advancing the capabilities of multi-layer semiconductor structures.
Latest Patents
One of Hai Ding's latest patents is a method to reduce metal fuse thickness without the need for an extra mask. This innovative approach involves several steps, including depositing a first dielectric layer over a semiconductor structure and a first metal layer over the first dielectric layer. The process continues with patterning the first metal layer to create a plurality of first metal lines, followed by the deposition of a second dielectric layer over these lines. A portion of the second dielectric layer is then removed to expose the top surfaces of selected first metal lines, allowing for a reduction in thickness of these lines compared to the unselected ones. This method not only enhances the fabrication process but also contributes to the development of more efficient multi-layer semiconductor structures.
Career Highlights
Hai Ding is currently employed at STMicroelectronics GmbH, where he continues to innovate and push the boundaries of semiconductor technology. His work has been instrumental in developing methods that improve the efficiency and performance of semiconductor devices.
Collaborations
Throughout his career, Hai Ding has collaborated with talented individuals such as Fuchao Wang and Ming Fang. These partnerships have fostered an environment of creativity and innovation, leading to advancements in their respective fields.
Conclusion
In summary, Hai Ding is a prominent inventor whose work in semiconductor technology has led to significant advancements. His innovative methods and collaborations highlight his dedication to improving the efficiency of multi-layer semiconductor structures.