Stmicroelectronics Gmbh

Hai Ding

Fuchao Wang

Ming Fang

Zhiyong Xie

Larry R Tullos

Methods of fabricating a multi-layer semiconductor structure are provided. In one embodiment, a method includes depositing a first dielectric layer over a semiconductor structure, depositing a first metal layer over the first dielectric layer, patterning the first metal layer to form a plurality of first metal lines, and depositing a second dielectric layer over the first metal lines and the first dielectric layer. The method also includes removing a portion of the second dielectric layer over selected first metal lines to expose a respective top surface of each of the selected first metal lines. The method further includes reducing a thickness of the selected first metal lines to be less than a thickness of the unselected first metal lines. A multi-layer semiconductor structure is also provided.

Method to reduce metal fuse thickness without extra mask

Connection between optical fibers and optical components within a semiconductor substrate. A lens is created at the front of a semiconductor substrate. A tapered hole is created in the back of the substrate exposing part or all of the surface of the lens. An optical component is formed or affixed at the front surface of the substrate. A volume of transparent adhesive is placed in the hole, followed by an optical fiber, which is thus coupled to the surface of the lens. A light guide is created on the front of the substrate overlying the lens to direct optical signals between the optical fiber inserted in the tapered hole and the optical component on the surface of the substrate.

Method and system for vertical optical coupling on semiconductor substrate

A microlens of an inorganic material having a relatively high index of refraction is formed with a convex lower surface for refracting light from above through an underlying spacer layer to converge on a photodiode therebelow. The microlens and photodiode may be replicated in an array of such elements along with color filters and CMOS circuit elements on a semiconductor chip to provide an image sensor. The spacer layer, which has a relatively low refractive index, is subjected to a selective isotropic etch through an opening in an etch mask to define a concave surface that forms an interface with the convex lower surface of the microlens upon subsequent conformal deposition of the material of the microlens.

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Phoenix, AZ, United States of America

Hai Ding