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For the Inventor, By the Inventor

Osan, South Korea

Haejun Yu

This inventor holds 13 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haejun Yu. Retrieved from https://idiyas.com/inventor/haejun-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 13 

% Patents Active = 100.0

Average Co-Inventor Count = 5.4

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:

goldMedal13 out of 138,671 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2022-2026

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Areas of Expertise:
Integrated Circuit
Semiconductor
SRAM Cell
Field Effect Transistor
Source/Drain Layers
Fabrication Methods
Liner Layer
Air Gap
Fin Field Effect Transistors
Gate Electrode
13 patents (USPTO):Explore Patents
1. 12598804 - Integrated circuit device (2026-04-07),
2. 12495578 - Semiconductor devices including source/drain layers and methods of manufacturing the same (2025-12-09),
3. 12310055 - Semiconductor device and method of fabricating the same (2025-05-20),
4. 12288805 - Integrated circuit device and method of manufacturing the same (2025-04-29),
5. 12256564 - Semiconductor device having a liner layer and method of fabricating the same (2025-03-18),
6. 12243874 - Method of forming a static random-access memory (SRAM) cell with fin field effect transistors (2025-03-04),
7. 12113108 - Integrated circuit device (2024-10-08),
8. 12046632 - Semiconductor device having air gap between gate electrode and source/drain pattern (2024-07-23),
9. 12034043 - Integrated circuit device and method of manufacturing the same (2024-07-09),
10. 11888028 - Semiconductor device having a liner layer and method of fabricating the same (2024-01-30),
11. 11682673 - Semiconductor device (2023-06-20),
12. 11605711 - Semiconductor device having an air gap between gate electrode and source/drain pattern (2023-03-14),
13. 11417731 - Semiconductor device including a field effect transistor and method of fabricating the same (2022-08-16),

Title: Inventor Haejun Yu: Revolutionizing Technology in Osan-si, KR

Introduction: Haejun Yu is a visionary inventor hailing from Osan-si, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Haejun Yu holds several patents in the realm of artificial intelligence, robotics, and renewable energy technologies, showcasing his innovative spirit and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Haejun Yu has worked with top research institutions and leading tech companies, spearheading projects that have pushed the boundaries of what is possible in the tech industry.

Collaborations: Throughout his career, Haejun Yu has collaborated with renowned scientists, engineers, and inventors from around the globe, fostering a culture of innovation and knowledge-sharing in the tech community.

Conclusion: Haejun Yu's relentless pursuit of innovation and his passion for creating technology that makes a difference have solidified his position as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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