The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2025
Filed:
May. 17, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jinbum Kim, Seoul, KR;
Gyeom Kim, Hwaseong-si, KR;
Hyojin Kim, Hwaseong-si, KR;
Haejun Yu, Osan-si, KR;
Seunghun Lee, Hwaseong-si, KR;
Kyungin Choi, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An integrated circuit device is provided and includes: a fin-type active region extending in a first horizontal direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region on the fin-type active region and extending in a second horizontal direction crossing the first horizontal direction, an insulating spacer covering a sidewall of the gate line, a source/drain region connected to the channel region on the fin-type active region and including a first portion facing the sidewall of the gate line with the insulating spacer therebetween, an air gap between the insulating spacer and the first portion of the source/drain region, and an insulating liner including a portion in contact with the source/drain region and a portion defining a size of the air gap. A method of manufacturing the integrated circuit device is further provided.