The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Apr. 14, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yeondo Jung, Suwon-si, KR;
Chul Kim, Suwon-si, KR;
Kichul Kim, Suwon-si, KR;
Gwirim Park, Suwon-si, KR;
Haejun Yu, Swuon-si, KR;
Chaeyeong Lee, Suwon-si, KR;
Kyungin Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An integrated circuit device includes a pair of fin-type active regions, which extend in a first horizontal direction on a substrate, and a fin isolation insulator between ones of the pair of fin-type active regions to extend in a second horizontal direction that intersects with the first horizontal direction. The fin isolation insulator includes a first nitrogen-rich barrier film having at least one protrusion at a position that is higher than respective top surfaces of each of the pair of fin-type active regions with respect to the substrate, and a second nitrogen-rich barrier film, which is spaced apart from the first nitrogen-rich barrier film and is in a space defined by the first nitrogen-rich barrier film.