The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Apr. 12, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyungin Choi, Seoul, KR;

Dongmyoung Kim, Suwon-si, KR;

Haejun Yu, Osan-si, KR;

Ki-Hyung Ko, Suwon-si, KR;

Jiho Yoo, Seongnam-si, KR;

Soonwook Jung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6713 (2025.01); H01L 21/0259 (2013.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

A semiconductor device includes an active pattern provided on a substrate, a source/drain pattern provided on the active pattern, a channel pattern configured to be connected to the source/drain pattern, a gate electrode configured to be extended in a first direction and to cross the channel pattern, and a first spacer provided on a side surface of the gate electrode. The first spacer includes a fence portion provided on a side surface of the active pattern and below the source/drain pattern. The source/drain pattern includes a body portion and a neck portion between the body portion and the active pattern. The body portion includes a crystalline surface configured to be slantingly extended from the neck portion. The crystalline surface is configured to be spaced apart from an uppermost portion of the fence portion.


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