This inventor holds 3 USPTO granted patents. Top assignees: Changxin Memory Technologies, Inc., Changxin Jidian (Beijing) Memory Technologies Co., Ltd.. Active years: 2026.
Company Filing History:
3 out of 1,841 
1 out of 5 Years Active: 2026
Title: Gyuseog Cho: Innovator in Semiconductor Technology
Introduction
Gyuseog Cho is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing memory structures and semiconductor manufacturing methods.
Latest Patents
Cho's latest patents include innovative designs for memory structures and semiconductor structures. One of his patents describes a memory structure that features a substrate with isolation structures, defining an active area that includes a channel region, source region, and drain region. The design incorporates a gate structure that covers the channel region, along with a source and drain that have tooth-shaped portions for improved connectivity. Another patent presents a semiconductor structure that increases channel length, featuring a substrate with an active region and a gate that includes conductive portions arranged strategically to enhance performance.
Career Highlights
Gyuseog Cho is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing advanced technologies that are crucial for modern electronics.
Collaborations
Throughout his career, Cho has collaborated with notable colleagues, including Qinghua Han and JeongGi Kim. These partnerships have fostered a collaborative environment that enhances the innovation process.
Conclusion
Gyuseog Cho's contributions to semiconductor technology exemplify the spirit of innovation. His patents reflect a commitment to advancing the field and improving the efficiency of memory structures.