The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Aug. 10, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventors:

Qinghua Han, Hefei, CN;

Jeonggi Kim, Hefei, CN;

Gyuseog Cho, Hefei, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/05 (2023.02);
Abstract

Provided are a memory structure, a semiconductor structure and a method for manufacturing same. The semiconductor structure includes: a substrate, isolation structures provided in the substrate, delimiting an active area in the substrate, the active area including a channel region, and a source region and a drain region at opposite sides of the channel region; a gate structure, located on an upper surface of the substrate and covering the channel region; a source and a drain, located at opposite sides of the gate structure, respectively, the source in contact with the source region, the drain in contact with the drain region, and each of the source and the drain having a tooth-shaped portion; and a first contact plug and a second contact plug, located at the opposite sides of the gate structure, respectively, and connected to the tooth-shaped portion of the source and the tooth-shaped portion of the drain, respectively.


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