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For the Inventor, By the Inventor

Yongin, South Korea

Gyu-Hong Kim

This inventor holds 20 USPTO granted patents, primarily in Semiconductor Memory Devices. Top assignees: Samsung Electronics Co., Ltd., Hyundai Motor Company, Kia Motors Corporation. Active years: 2002-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gyu-Hong Kim. Retrieved from https://idiyas.com/inventor/gyu-hong-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 85.0

Average Co-Inventor Count = 1.9

ph-index = 6

Forward Citations = 104(Granted Patents)


Location History:

  • Yongin, KR (2004 - 2005)
  • Yongin-si, KR (2006 - 2009)
  • Seoul, KR (2002 - 2019)
  • Gyeonggi-do, KR (2005 - 2021)

Company Filing History:

goldMedal19 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 20,313 
 
Hyundai Motor Company
 patents
bronzeMedal1 out of 8,094 
 
Kia Motors Corporation
 patents
4. 1 out of 1,486 
 
Yonsei University
 patents
where one patent can have more than one assignee

Years Active: 2002-2021

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Areas of Expertise:
Charging Control
Semiconductor Device
Asymmetric Precharge
Flash Memory
High Voltage Generation
Data Transfer
Precharge Circuit
Low Power Consumption
Refresh Control
Row Redundancy
Multi-Time Programmable
Sense Amplifier
20 patents (USPTO):Explore Patents
1. 11135926 - System and method for controlling charging of plug-in vehicle (2021-10-05),
2. 10311946 - Semiconductor memory device with assymetric precharge (2019-06-04),
3. 9026975 - Semiconductor integrated circuit, method of designing the same, and method of fabricating the same (2015-05-05),
4. 8934313 - Negative voltage generator and semiconductor memory device (2015-01-13),
5. 7852694 - Semiconductor memory device for reducing precharge time (2010-12-14),
6. 7561486 - Flash memory devices with flash fuse cell arrays (2009-07-14),
7. 7560974 - Generation of back-bias voltage with high temperature sensitivity (2009-07-14),
8. 7376029 - Semiconductor memory devices including precharge circuit and methods for precharging (2008-05-20),
9. 7315221 - Method and circuit for controlling a refresh of a semiconductor memory device (2008-01-01),
10. 7274614 - Flash cell fuse circuit and method of fusing a flash cell (2007-09-25),
11. 7269076 - Low power consumption data input/output circuit of embedded memory device and data input/output method of the circuit (2007-09-11),
12. 7227802 - Multi-time programmable semiconductor memory device and multi-time programming method therefor (2007-06-05),
13. 7088628 - Memory device and method of amplifying voltage levels of bit line and complementary bit line (2006-08-08),
14. 7079435 - Sense amplifier circuit to write data at high speed in high speed semiconductor memory (2006-07-18),
15. 6927999 - Integrated circuit memory devices and methods of programming the same in which the current drawn during a programming operation is independent of the data to be programmed (2005-08-09),

Title: Inventor Gyu-Hong Kim: Revolutionizing Technology in Yongin-si, KR

Introduction: Gyu-Hong Kim is a visionary inventor based in Yongin-si, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Gyu-Hong Kim holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Gyu-Hong Kim has worked with leading tech companies and research institutions, spearheading projects that have pushed the boundaries of technological advancements.

Collaborations: Throughout his career, Gyu-Hong Kim has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange to drive progress in the tech industry.

Conclusion: Gyu-Hong Kim's relentless pursuit of innovation and his passion for creating technology that shapes the future make him a prominent figure in the world of inventors, with his work leaving a lasting impact on the technological landscape of Yongin-si, KR.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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