The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Jul. 28, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Han-Wool Jeong, Seoul, KR;

Woo-Jin Rim, Suwon-si, KR;

Tae-Joong Song, Seongnam-si, KR;

Seong-Ook Jung, Seoul, KR;

Gyu-Hong Kim, Seoul, KR;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/18 (2006.01); G11C 11/419 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 7/18 (2013.01); G11C 11/4091 (2013.01); G11C 2207/002 (2013.01);
Abstract

The semiconductor memory device includes: a memory cell; a sensing circuit connected to the memory cell via a first bit line and a second bit line different from the first bit line, the sensing circuit configured to sense data stored in the memory cell; and a bit line voltage control circuit connected to the memory cell via the first bit line and the second bit line, the bit line voltage control circuit configured to precharge the first bit line to a first voltage that is lower than a supply voltage and to precharge the second bit line to a second voltage that is lower than the supply voltage and is different from the first voltage.


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