Guqiao Ding

Title: Guqiao Ding: Innovator in Graphene Technology

Introduction

Guqiao Ding is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of graphene technology, holding a total of 3 patents. His work focuses on innovative methods for the growth and preparation of graphene, which has numerous applications in electronics and materials science.

Latest Patents

Ding's latest patents include a growth method of graphene and a method for preparing graphene. The growth method involves providing an insulating substrate, heating it to a preset temperature, and introducing a gas containing a catalytic element. This process allows for the rapid growth of high-quality graphene, improving production yield and reducing costs. The graphene produced can be utilized in novel electronic devices and transparent conducting films. The method for preparing graphene utilizes CBra as a source material and employs techniques such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). This innovative approach allows for the controllable deposition of catalysts and source materials on various substrates, enhancing the versatility of graphene production.

Career Highlights

Guqiao Ding is affiliated with the Chinese Academy of Sciences, where he conducts his research and development in graphene technology. His work has positioned him as a key figure in the advancement of materials science, particularly in the application of graphene in various industries.

Collaborations

Ding collaborates with notable colleagues, including Xiaoming Xie and Shujie Tang, who contribute to his research endeavors and help advance the field of graphene technology.

Conclusion

Guqiao Ding's innovative work in graphene technology showcases his commitment to advancing materials science. His patents reflect a deep understanding of the complexities involved in graphene production and its potential applications. His contributions are paving the way for future developments in this exciting field.