The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Mar. 26, 2015
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;
Haomin Wang, Shanghai, CN;
Shujie Tang, Shanghai, CN;
Guangyuan Lu, Shanghai, CN;
Tianru Wu, Shanghai, CN;
Da Jiang, Shanghai, CN;
Guqiao Ding, Shanghai, CN;
Xuefu Zhang, Shanghai, CN;
Hong Xie, Shanghai, CN;
Xiaoming Xie, Shanghai, CN;
Mianheng Jiang, Shanghai, CN;
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES, Changning District, Shanghai, CN;
Abstract
The present invention provides a growth method of grapheme, which at least comprises the following steps: S: providing an insulating substrate, placing the insulating substrate in a growth chamber; S: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.