Chinese Academy of Sciences

Guqiao Ding

Xiaoming Xie

Mianheng Jiang

Shujie Tang

Chen Xiao Wang

Qingbo Liu

Hailong Wang

Ji Yu Chen

Zengfeng Di

Haomin Wang

Tianru Wu

Hong Xie

Guangyuan Lu

Shumin Wang

Xuefu Zhang

Da Jiang

Qian Gong

The present invention provides a growth method of grapheme, which at least comprises the following steps: S: providing an insulating substrate, placing the insulating substrate in a growth chamber; S: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

Growth method of graphene

The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBras a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBron a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBrsource can be quantitatively and controllably deposited on any substrate, and the catalyst and CBrsource react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.

Method for preparing graphene

A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.

Method for preparing graphene nanoribbon on insulating substrate

Growing community of inventors

Shanghai, China

Guqiao Ding