The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Jul. 03, 2012
Shumin Wang, Shanghai, CN;
Qian Gong, Shanghai, CN;
Xiaoming Xie, Shanghai, CN;
Hailong Wang, Shanghai, CN;
Zengfeng Di, Shanghai, CN;
Guqiao Ding, Shanghai, CN;
Qingbo Liu, Shanghai, CN;
Shumin Wang, Shanghai, CN;
Qian Gong, Shanghai, CN;
Xiaoming Xie, Shanghai, CN;
Hailong Wang, Shanghai, CN;
Zengfeng Di, Shanghai, CN;
Guqiao Ding, Shanghai, CN;
Qingbo Liu, Shanghai, CN;
Abstract
The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBras a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBron a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBrsource can be quantitatively and controllably deposited on any substrate, and the catalyst and CBrsource react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.