This inventor holds 2 USPTO granted patents and 97 published patent applications. Top assignee: Intel Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Guowei Xu - Innovator in Integrated Circuit Technology
Introduction
Guowei Xu is an inventor based in Portland, OR (US), known for his contributions to the field of integrated circuit (IC) technology. His work focuses on optimizing transistor performance and enhancing the uniformity of front-end structures in IC devices. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.
Latest Patent Applications
1. **TRANSISTOR METALLIZATION ENDCAP SCALING FOR PERFORMANCE OPTIMIZATION** - This application describes integrated circuit (IC) devices featuring transistors with electrodes and/or contacts positioned in close proximity. The design includes a transistor structure with a channel between a source and a drain, a gate electrode over the channel region, and contacts on the source and drain. The electrodes and contacts extend past the edge or sidewall of the channel at varying distances, resulting in unaligned ends. Notably, one or both of the source and drain contacts may extend beyond the gate electrode, which may also extend past one or both of the source and drain contacts. The dimensions of these components can be formed to unaligned specifications or adjusted through trimming.
2. **BACKSIDE ETCH PROCESSES FOR ULTRA UNIFORMITY OF FRONT-END STRUCTURES** - This application focuses on isolation structures between transistors in integrated circuit (IC) devices. The design includes transistors connected to an interconnect network, with a dielectric structure positioned between them. This structure features a wider width away from the interconnect network and a narrower width closer to it. The wider back-side widths of the dielectric structures serve to separate gate electrodes and/or source and drain contacts of the transistors. These structures are created by etching an opening between the metallization structures of the transistors from the back side of the device substrate and depositing liner and fill dielectrics over the back-side opening.
Conclusion
Guowei Xu is an innovative inventor whose work in integrated circuit technology showcases his commitment to advancing the field. His latest patent applications reflect his focus on optimizing transistor performance and enhancing device uniformity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
