Integrated circuit structure with recessed trench contact and deep boundary via

Abstract

Integrated circuit structures having recessed trench contacts and deep boundary vias are described. For example, an integrated circuit structure includes a plurality of gate lines extending over a plurality of semiconductor nanowire stack channel structures. A plurality of trench contacts extends over a plurality of source or drain structures, where a first one of the plurality of trench contacts has a recess therein. A backside metal routing layer is extending beneath the plurality of gate lines and beneath the plurality of trench contacts. A conductive structure couples the backside metal routing layer to a second one of the one or more of the plurality of trench contacts. The conductive structure includes a pillar portion in contact with the second one of the plurality of trench contacts, the pillar portion on a line portion, the line portion in contact with and extending along the backside metal routing layer.