Guenter Gerstmeier

Title: Guenter Gerstmeier: Innovator in Semiconductor Technology

Introduction

Guenter Gerstmeier is a prominent inventor based in Chapel Hill, NC (US), known for his significant contributions to semiconductor technology. With a total of 10 patents, he has made remarkable advancements in the field of dynamic random access memory (DRAM) and semiconductor fabrication processes.

Latest Patents

Gerstmeier's latest patents include a high-density DRAM with reduced peripheral device area and a method of manufacture. This innovative DRAM structure features a distance of less than 0.14 um between the contacts to silicon and the gate conductor. Additionally, he has developed a method for forming this structure, which allows for the simultaneous creation of the DRAM array contacts and the contacts to silicon. Another notable patent is for a maskless middle-of-line liner deposition process. This process fabricates a semiconductor structure that includes both core and periphery regions, allowing for controlled deposition of the middle-of-line liner using plasma-enhanced chemical vapor deposition.

Career Highlights

Throughout his career, Gerstmeier has worked with leading companies in the semiconductor industry, including Infineon Technologies AG and Infineon Technologies LLC. His work has been instrumental in advancing the capabilities of semiconductor devices, particularly in enhancing memory technology.

Collaborations

Gerstmeier has collaborated with notable professionals in the field, including Michael Maldei and Brian Cousineau. These collaborations have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Guenter Gerstmeier's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence advancements in memory technology and semiconductor fabrication processes.