The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Mar. 06, 2003
Michael Maldei, Durham, NC (US);
Malati Hegde, Cary, NC (US);
Guenter Gerstmeier, Chapel Hill, NC (US);
Jinwhan Lee, Raleigh, NC (US);
Steven M. Baker, Morrisville, NC (US);
Jon S. Berry, Ii, Raleigh, NC (US);
Brian Cousineau, Burlington, NC (US);
Wenchao Zheng, Raleigh, NC (US);
Michael Maldei, Durham, NC (US);
Malati Hegde, Cary, NC (US);
Guenter Gerstmeier, Chapel Hill, NC (US);
Jinwhan Lee, Raleigh, NC (US);
Steven M. Baker, Morrisville, NC (US);
Jon S. Berry, II, Raleigh, NC (US);
Brian Cousineau, Burlington, NC (US);
Wenchao Zheng, Raleigh, NC (US);
Infineon Technologies AG, Munich, DE;
Abstract
A capacitor for a semiconductor device and a method of manufacturing a capacitor for a semiconductor device is disclosed that uses radial current flow. The capacitor includes a semiconductor substrate that includes a plurality of insulation islands. An insulation layer is formed over the semiconductor substrate. Gate electrodes are formed on top of the insulation layer. An array of CD contact pads including a plurality of CD contacts are connected to the semiconductor substrate in a first predetermined number of locations. An array of CG contact pads including at least one CG contact connected to the gate electrodes such that each CG contact is connected to a respective gate electrode above a respective insulation island in a second predetermined number of locations.