Grace H Ho

Title: Grace H Ho: Innovator in Semiconductor Technology

Introduction

Grace H Ho is a prominent inventor based in Tainan, Taiwan. She has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. Her work focuses on improving processes and materials used in semiconductor manufacturing.

Latest Patents

One of her latest patents is titled "In-situ overlay alignment." This patent discloses a semiconductor wafer that includes a plurality of fields, featuring alignment fields with intra-field small scribe lane primary mark (SSPM) overlay mark pairs. These SSPM mark pairs facilitate in-situ, non-passive intra-field alignment correction. The design allows for flexibility, with embodiments that may include between two and four alignment fields and SSPM mark pairs around each field.

Another notable patent is the "Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer." This method aims to prevent carbon and nitrogen penetration from a deposited overlayer into a dielectric insulating layer. It enhances subsequent photolithographic patterning and anisotropic etching processes. The method involves treating the dielectric insulating layer with a hydrogen-containing plasma to create a resistance to nitrogen and carbon species.

Career Highlights

Grace H Ho is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where she continues to innovate in semiconductor technologies. Her expertise and contributions have positioned her as a key figure in her field.

Collaborations

Throughout her career, Grace has collaborated with notable colleagues, including Shing-Chyang Pan and Shwang-Ming Jeng. These collaborations have further enriched her work and expanded the impact of her inventions.

Conclusion

Grace H Ho is a distinguished inventor whose work in semiconductor technology has led to significant advancements. Her patents reflect her commitment to innovation and excellence in the industry.